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PDF BTS409L1 Data sheet ( Hoja de datos )
| Número de pieza | BTS409L1 | |
| Descripción | Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PROFET® BTS409L1
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
43 V
5.0 ... 34 V
200 mΩ
2.3 A
4A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
Short to Vbb
detection
OUT
Temperature
sensor
5
RO
Load
GND
1
Signal GND
GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
12.96
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input resistance
see circuit page 6
RI
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+)
Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-)
Input threshold hysteresis
∆ VIN(T)
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150°C
IIN(off)
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
Delay time for status with open load after switch
off
(see timing diagrams, page 10), Tj =-40..+150°C
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
td(ST OL4)
td(ST)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low)
Tj = +150°C, IST = +1.6 mA:
BTS409L1
Values
Unit
min typ max
2.5 3.5
6 kΩ
1.7 -- 3.5 V
1.5 -- -- V
-- 0.5
-- V
1 -- 50 µA
20 50 90 µA
100 400 800 µs
-- 250 600 µs
5.4 6.1
--
-- -- 0.4
-- -- 0.6
V
11) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
5 Page 
Figure 6a: Undervoltage:
IN
Vbb
V
bb(under)
V OUT
Figure 7a: Overvoltage:
BTS409L1
Vbb(u cp)
Vbb(u rst)
IN
Vbb
VON(CL) Vbb(over)
Vbb(o rst)
V
OUT
ST open drain
t
Figure 6b: Undervoltage restart of charge pump
Von VON(CL)
ST
t
V
bb(over)
V
bb(u rst)
V bb(under)
V
bb(u cp)
V
bb(o rst)
charge pump starts at Vbb(ucp) =5.6 V typ.
V bb
Semiconductor Group
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BTS409L1.PDF ] | |
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