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PDF BTS4141D Data sheet ( Hoja de datos )
| Número de pieza | BTS4141D | |
| Descripción | Smart High-Side Power Switch 1 Channel: 1 x 200m | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS4141D (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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Smart High-Side Power Switch
1 Channel: 1 x 200mΩ
BTS 4141D
Features
Product Summary
• Short circuit protection
Overvoltage protection
• Current limitation
Operating voltage
• Overload protection
On-state resistance
• Overvoltage protection (including load dump)
• Undervoltage shutdown with auto-
restart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output
with inductive loads
• CMOS compatible input
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
Vbb(AZ)
Vbb(on)
RON
47 V
12...45 V
200 mΩ
P-TO252-5-1
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2004-01-27
1 page  
BTS 4141D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified
Operating Parameters
min. typ. max.
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Standby current
Tj = -40...85 °C, VIN ≤ 1,2 V
Tj = 125 °C1)
Operating current
Leakage output current (included in Ibb(off))
VIN ≤ 1,2 V
Vbb(on)
Vbb(under)
Vbb(u rst)
∆Vbb(under)
12
7
-
-
- 45 V
- 10.5
- 11
0.5 -
Ibb(off)
IGND
IL(off)
µA
- 10 25
- - 50
- 1 1.6 mA
- 3.5 10 µA
Protection Functions2)
Initial peak short circuit current limit
Tj = -40 °C, Vbb = 20 V, tm = 150 µs
Tj = 25 °C
Tj = 125 °C
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), Ibb = 4 mA
Overvoltage protection 3)
Ibb = 4 mA
Thermal overload trip temperature4)
Thermal hysteresis
IL(SCp)
IL(SCr)
VON(CL)
Vbb(AZ)
Tjt
∆Tjt
- - 2.1
- 1.4 -
0.7 -
-
- 1.1 -
47 52
-
47 -
-
135 -
- 10
-
-
1higher current due temperature sensor
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3see also VON(CL) in circuit diagram
4 higher operating temperature at normal function available
A
V
°C
K
Page 5
2004-01-27
5 Page 
GND disconnect
Vbb VIN
Vbb
IN PROFET OUT
GND
VGND
GND disconnect with GND pull up
Vbb
IN PROFET OUT
GND
Vbb VIN
VGND
BTS 4141D
Inductive Load switch-off energy
dissipation
E bb
=
E AS
Vbb
IN PROFET OUT
L
{GND
ZL
RL
ELoad
EL
ER
Energy stored in load inductance: EL = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET is
EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:
EAS =
IL * L
2 * RL
* (V bb + | V O U T ( C L )| ) * ln (1 +
|
I
V
L
O
*
UT
RL
(CL
)
|
)
Vbb disconnect with charged inductive
load
Vbb
high IN PROFET OUT
GND
Vbb
Page 11
2004-01-27
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BTS4141D.PDF ] | |
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