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PDF BTS640S2G Data sheet ( Hoja de datos )
| Número de pieza | BTS640S2G | |
| Descripción | Smart Sense High-Side Power Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PROFET® BTS 640 S2
Smart Sense High-Side
Power Switch
Features
• Short circuit protection
• Current limitation
• Proportional load current sense
• CMOS compatible input
• Open drain diagnostic output
• Fast demagnetization of inductive loads
• Undervoltage and overvoltage shutdown with
Product Summary
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(on)
RON
IL(ISO)
IL(SCr)
Package
TO220-7-11
TO263-7-2
auto-restart and hysteresis
• Overload protection
• Thermal shutdown
• Overvoltage protection including load dump (with
1
Standard (staggered)
1
SMD
external GND-resistor)
• Reverse battery protection (with external GND-resistor)
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
5.0 ... 34 V
30 mΩ
12.6 A
24 A
TO220-7-12
1
Straight
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Block Diagram
3 IN
Voltage
source
V Logic
Voltage
sensor
1 ST ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
5 IS
I IS
RIS
GND
2
Signal GND
Temperature
sensor
+ Vbb
4
Current
Sense
OUT 6, 7
IL
Load
RO
GND
PROFET
Load GND
Semiconductor Group
Page 1 of 15
2003-Oct-01
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions8)
Initial peak short circuit current limit (pin 4 to 6&7)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 12)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL); IL= 40 mA,
Tj =-40°C:
Tj =+25..+150°C:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 9)
Reverse battery voltage drop (Vout > Vbb)
IL = -5 A
Tj=150 °C:
IL(SCp)
IL(SCr)
VON(CL)
Tjt
∆Tjt
-Vbb
-VON(rev)
Diagnostic Characteristics
Current sense ratio10), static on-condition,
VIS = 0...5 V, Vbb(on) = 6.511)...27V,
kILIS = IL / IIS
Tj = -40°C, IL = 5 A:
Tj= -40°C, IL= 0.5 A:
Tj= 25...+150°C, IL= 5 A:
, Tj= 25...+150°C, IL = 0.5 A:
Current sense output voltage limitation
Tj = -40 ...+150°C
IIS = 0, IL = 5 A:
Current sense leakage/offset current
Tj = -40 ...+150°C
VIN=0, VIS = 0, IL = 0:
VIN=5 V, VIS = 0, IL = 0:
VIN=5 V, VIS = 0, VOUT = 0 (short circuit):
kILIS
VIS(lim)
IIS(LL)
IIS(LH)
IIS(SH)12 )
BTS 640 S2
Values
Unit
min typ max
48 56
40 50
31 37
-- 24
41 --
43 47
150 --
-- 10
-- --
-- 600
65 A
58
45
-- A
-- V
52
-- °C
-- K
32 V
-- mV
4550
3300
4550
4000
5000
5000
5000
5000
6000
8000
5550
6500
5.4 6.1 6.9 V
0 -- 1 µA
0 -- 15
0 -- 10
8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 9).
10) This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by
a factor of two by matching the value of kILIS for every single device.
In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is
High. See figure 2b, page 11.
11) Valid if Vbb(u rst) was exceeded before.
12) not subject to production test, specified by design
Semiconductor Group
Page 5
2003-Oct-01
5 Page 
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IN
Figure 2a: Switching a lamp
IN
ST
BTS 640 S2
ST t don(ST)
t doff(ST)
VOUT
VOUT
ton
IL tslc(IS)
t off
t slc(IS)
Load 1
Load 2
IIS
tson(IS)
t soff(IS)
t
The sense signal is not valid during settling time after turn or
change of load current.
IL
I IS
Figure 2b: Switching a lamp with current limit:
IN
t
Figure 1b: Vbb turn on:
IN
Vbb
ST
VOUT
IL
IL
IIS
t
IIS
ST
proper turn on under all conditions
Semiconductor Group
t
Page 11
2003-Oct-01
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BTS640S2G.PDF ] | |
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