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부품번호 | BTS640S2S 기능 |
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기능 | Smart Sense High-Side Power Switch | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 15 페이지수
PROFET® BTS 640 S2
Smart Sense High-Side
Power Switch
Features
• Short circuit protection
• Current limitation
• Proportional load current sense
• CMOS compatible input
• Open drain diagnostic output
• Fast demagnetization of inductive loads
• Undervoltage and overvoltage shutdown with
Product Summary
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(on)
RON
IL(ISO)
IL(SCr)
Package
TO220-7-11
TO263-7-2
auto-restart and hysteresis
• Overload protection
• Thermal shutdown
• Overvoltage protection including load dump (with
1
Standard (staggered)
1
SMD
external GND-resistor)
• Reverse battery protection (with external GND-resistor)
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
5.0 ... 34 V
30 mΩ
12.6 A
24 A
TO220-7-12
1
Straight
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Block Diagram
3 IN
Voltage
source
V Logic
Voltage
sensor
1 ST ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
5 IS
I IS
RIS
GND
2
Signal GND
Temperature
sensor
+ Vbb
4
Current
Sense
OUT 6, 7
IL
Load
RO
GND
PROFET
Load GND
Semiconductor Group
Page 1 of 15
2003-Oct-01
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 13
Tj =-40...+25°C:
Tj =25...150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Overvoltage protection6)
Ibb=40 mA
Tj =-40...+150°C:
Tj =-40°C:
Tj =+25...+150°C
Standby current (pin 4)
VIN=0
Tj=-40...+25°C:
Tj= 150°C:
Off state output current (included in Ibb(off))
VIN=0,
Tj =-40...+150°C:
Operating current (Pin 2)7), VIN=5 V
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
∆Vbb(under)
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
Ibb(off)
IL(off)
IGND
BTS 640 S2
Values
Unit
min typ max
5.0 -- 34
3.2 -- 5.0
-- 4.5 5.5
6.0
V
V
V
-- 4.7 6.5
-- -- 7.0
-- 0.5
--
V
V
34 -- 43 V
33 -- -- V
-- 1 -- V
41 -- -- V
43 47 52
-- 4 15 µA
-- 12 25
-- -- 10 µA
-- 1.2
3 mA
5) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V
6) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram page 9.
7) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 4
2003-Oct-01
4페이지 BTS 640 S2
Truth Table
Normal
operation
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
Vbb
Open load
Undervoltage
Overvoltage
Negative output
voltage clamp
L = "Low" Level
H = "High" Level
Input Output
level
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
level
L
H
L
H
L
L16)
L
L
H
H
L19)
H
L
L
L
L
L
Status
level
H
L
H
H
H
H
H
H
L17)
L
H (L20))
L
H
L
H
L
H
Current
Sense
IIS
0
nominal
0
0
0
0
0
0
0
<nominal 18)
0
0
0
0
0
0
0
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
16) The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is
zero
17) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
18) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
19) Power Transistor off, high impedance
20) with external resistor between pin 4 and pin 6&7
Semiconductor Group
Page 7
2003-Oct-01
7페이지 | |||
구 성 | 총 15 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
BTS640S2 | Smart Sense High-Side Power Switch | Infineon Technologies AG |
BTS640S2G | Smart Sense High-Side Power Switch | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |