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Número de pieza | BTS660P | |
Descripción | Smart Highside High Current Power Switch | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTS660P (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! PROFET® Data Sheet BTS660P
Smart Highside High Current Power Switch
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
70
62
5.0 ... 58
V
V
V
9 mΩ
44 A
90 A
13 000
TO 220-7SMD
Application
• Power switch with current sense diagnostic
feedback for up to 48 V DC grounded loads
• Most suitable for loads with high inrush current
77
1
Standard
1
SMD
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 IN
ESD
I IN
Logic
VIN
VIS
Logic GND
IS I IS
5
RIS
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
Temperature
sensor
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2003-Oct-01
1 page Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Symbol
Protection Functions16)
Short circuit current limit (Tab to pins 1,2,6,7)
VON = 24 V, time until shutdown max. 300 µs Tc =-40°C:
see page 8 and 13
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC) 17)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
Short circuit shutdown detection voltage 17)
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
IL(SC)
IL(SC)
IL(SC)
td(SC)
VON(CL)
VON(SC)
Tjt
∆Tjt
Reverse Battery
Reverse battery voltage 18)
On-state resistance (Pins 1,2,6,7 to pin 4)
Vbb = -12V, VIN= 0, IL= - 20 A, RIS = 1 kΩ
Integrated resistor in Vbb line
Tj = 25°C:
Tj = 150°C:
Tj = 25C:
Tj =150°C:
-Vbb
RON(rev)
Rbb
Data Sheet BTS660P
Values
Unit
min typ max
-- 90 180 A
-- 90
--
50 80
--
80 -- 350 µs
62 65 72 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
-- -- 42 V
-- 8.8 10.5 mΩ
-- 20
90 120 135
105 125 150
Ω
)16 Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions
are not designed for continuous repetitive operation.
17) not subject to production test, specified by design
)18 The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To
reduce the power dissipation at the integrated Rbb resistor an input resistor is recommended as described
on page 9.
Infineon Technologies AG
Page 5
2003-Oct-01
5 Page Options Overview
Type
BTS 660P
Over temperature protection with hysteresis
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
Over voltage shutdown
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -15 V typ
X
X
X
-
X
X25)
Data Sheet BTS660P
)24 Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
)25 Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Infineon Technologies AG
Page 11
2003-Oct-01
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet BTS660P.PDF ] |
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