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부품번호 | BTS707 기능 |
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기능 | Smart Two Channel Highside Power Switch | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 12 페이지수
PROFET® BTS 707
Smart Two Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
• Fast demagnetization of inductive loads
• Reverse battery protection1)
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Vbb(AZ)
Vbb(on)
one
250
1.9
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
65
5.8 ... 58
two parallel
125
2.8
V
V
mΩ
A
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
7
17,18
13,14
4
8
2
6
5,9
Symbol
Vbb
IN1
IN2
OUT1
OUT2
ST1
ST2
GND1
GND2
N.C.
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Input 1,2, activates channel 1,2 in case of
logic high signal
Output 1,2, protected high-side power output
of channel 1,2. Design the wiring for the max.
short circuit current
Diagnostic feedback 1,2 of channel 1,2,
open drain, low in on state on failure or high in
off state on failure
Ground 1 of chip 1 (channel 1)
Ground 2 of chip 2 (channel 2)
Not Connected
Pin configuration (top view)
Vbb
GND1
IN1
ST1
N.C.
GND2
IN2
ST2
N.C.
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT1
16 Vbb
15 Vbb
14 OUT2
13 OUT2
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1 of 12
2003-Oct-01
BTS 707
Parameter and Conditions, each of the two channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
Unit
min typ max
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 Ω, Vbb = 20 V, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Vbb = 20 V,
Tj =-40...+150°C:
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Vbb = 20 V,
Tj =-40...+150°C:
ton
toff
dV/dton
-dV/dtoff
15 -- 80 µs
20 -- 70
-- -- 6 V/µs
-- -- 7 V/µs
Operating Parameters
Operating voltage4)
Tj =-40...+150°C: Vbb(on)
5.8 -- 58
Undervoltage shutdown
Tj =-40...+150°C: Vbb(under) 2.7 -- 4.7
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
-- -- 4.9
Undervoltage restart of charge pump
Vbb(ucp)
see diagram page 10
Tj =-40...+150°C:
-- 5.6 7.5
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage protection5)
I bb = 40 mA
∆Vbb(under)
Tj =-40...+150°C: Vbb(AZ)
-- 0.4
65 70
--
--
Standby current, all channels off
VIN = 0
Ibb(off)
Tj =150°C:
-- 20 70
--
Operating current 6), VIN = 5V, Tj =-40...+150°C
IGND = IGND1 + IGND2,
one channel on: IGND
two channels on:
-- 2.2
-- 4.4
--
--
Protection Functions7)
Initial peak short circuit current limit, (see timing
diagrams, page 9)
each channel, Tj =-40°C:
Tj =25°C:
Tj =+150°C:
two parallel channels
IL(SCp)
-- -- 19
-- 10
--
4.0 -- --
twice the current of one channel
Output clamp (inductive load switch off)8)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
VON(CL)
Tjt
∆Tjt
59 -- 75
150 --
-- 10
--
--
V
V
V
V
V
V
µA
mA
A
V
°C
K
4) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
5) see also VON(CL) in circuit diagram on page 7.
6) Add IST, if IST > 0
7) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
8) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
Semiconductor Group
4
2003-Oct-01
4페이지 Input circuit (ESD protection), IN1 or IN2
IN RI
ESD-ZD I
GND
II
BTS 707
Inductive and overvoltage output clamp,
OUT1 or OUT2
+Vbb
VZ
V ON
OUT
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
PROFET
Status output, ST1 or ST2
R ST(ON)
+5V
ST
Power GND
VON clamped to VON(CL) = -- V typ.
Overvoltage protection of logic part
GND1 or GND2
+ Vbb
GND
ESD-
ZD
IN R I
VZ2
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 0 Ω at
1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Logic
R ST ST
V Z1
PROFET
Short Circuit detection
Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by
the PROFET itself, external switch off recommended!
+ Vbb
R GND
GND
Signal GND
VZ1 = 6.1 V typ., VZ2 = 70 V typ., RI = 20 kΩ typ.,
RGND = 150 Ω, RST = 15 kΩ nominal.
Logic
unit
Short circuit
detection
Open-load detection, OUT1 or OUT2
V
ON
OFF-state diagnostic condition:
OUT VOUT > 3 V typ.; IN low
OFF
I L(OL)
Logic
unit
Open load
detection
Signal GND
VOUT
Semiconductor Group
7
2003-Oct-01
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
BTS707 | Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | Siemens Semiconductor Group |
BTS707 | Smart Two Channel Highside Power Switch | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |