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BTS711L1 데이터시트 PDF




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부품번호 BTS711L1 기능
기능 Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)
제조업체 Siemens Semiconductor Group
로고 Siemens Semiconductor Group 로고


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BTS711L1 데이터시트, 핀배열, 회로
PROFET® BTS 711 L1
Smart Four Channel Highside Power Switch
Features
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection
(including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation IL(SCr)
Vbb(AZ)
Vbb(on)
43 V
5.0 ... 34 V
one two parallel four parallel
200 100
50 m
1.9 2.8 4.4 A
4 4 4A
Application
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Symbol
Vbb
IN1
IN2
IN3
IN4
OUT1
OUT2
OUT3
OUT4
ST1/2
ST3/4
GND1/2
GND3/4
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
Input 1 .. 4, activates channel 1 .. 4 in case of
logic high signal
Output 1 .. 4, protected high-side power output
of channel 1 .. 4. Design the wiring for the
max. short circuit current
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
Ground 1/2 of chip 1 (channel 1 and channel 2)
Ground 3/4 of chip 2 (channel 3 and channel 4)
Pin configuration (top view)
Vbb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
Vbb
1
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT2
16 Vbb
15 Vbb
14 OUT3
13 OUT4
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96




BTS711L1 pdf, 반도체, 판매, 대치품
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS 711 L1
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
IL = 1.8 A
each channel,
Tj = 25°C:
Tj = 150°C:
RON
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
Nominal load current
one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB5), Ta = 85°C, Tj 150°C
Output current while GND disconnected or pulled
up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time
Turn-off time
RL = 12 , Tj =-40...+150°C
to 90% VOUT:
to 10% VOUT:
Slew rate on
10 to 30% VOUT, RL = 12 ,
Tj =-40...+150°C:
Slew rate off
70 to 40% VOUT, RL = 12 ,
Tj =-40...+150°C:
IL(NOM)
IL(GNDhigh)
ton
toff
dV/dton
-dV/dtoff
Operating Parameters
Operating voltage7)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 14
Tj =-40...+150°C:
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Overvoltage protection8)
I bb = 40 mA
Tj =-40...+150°C:
Tj =-40...+150°C:
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
Vbb(under)
Vbb(over)
Vbb(o rst)
Vbb(over)
Vbb(AZ)
-- 165 200 m
320 400
83 100
42 50
1.7 1.9
--
2.6 2.8
4.1 4.4
A
-- -- 10 mA
80 200 400 µs
80 200 400
0.1 -- 1 V/µs
0.1 -- 1 V/µs
5.0 -- 34
3.5 -- 5.0
-- -- 5.0
7.0
-- 5.6 7.0
-- 0.2
--
34 --
33 --
-- 0.5
42 47
43
--
--
--
V
V
V
V
V
V
V
V
V
7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT Vbb - 2 V
8) see also VON(CL) in circuit diagram on page 8.
Semiconductor Group
4

4페이지










BTS711L1 전자부품, 판매, 대치품
BTS 711 L1
Truth Table
Channel 1 and 2
Chip 1
IN1 IN2 OUT1 OUT2
ST1/2
ST1/2
Channel 3 and 4
(equivalent to channel 1 and 2)
Chip 2
IN3 IN4 OUT3 OUT4
ST3/4
ST3/4
BTS 711L1 BTS 712N1
Normal operation
Open load
Short circuit to Vbb
Overtemperature
Channel 1 (3)
Channel 2 (4)
Channel 1 (3)
Channel 2 (4)
both channel
Channel 1 (3)
L
L
H
H
L
L
H
L
H
X
L
L
H
L
H
X
L
X
H
L
H
L
H
L
H
L
H
X
L
L
H
L
H
X
L
L
H
L
H
X
X
X
L
L
H
H
Z
Z
H
L
H
X
H
H
H
L
H
X
L
L
L
L
L
LH
HH
LH
HH
L H(L14))
HH
XL
Z H(L14))
ZH
HL
L L15)
HH
X H(L16))
H L15)
HH
H H(L16))
LH
LL
LL
XH
XL
H
H
H
H
L
H
H
L
H
H
L15)
H
H
L15)
H
H
H
L
L
H
L
Channel 2 (4)
X
X
L
H
X
X
L
L
H
L
H
L
Undervoltage/ Overvoltage
XX
L
L
H
H
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
Ibb
Vbb
I IN1
I IN2
I ST1/2
VIN1 VIN2 VST1/2
3 IN1
Leadframe
VON1
VON2
Vbb 18 IL1
OUT1
5
IN2
PROFET
Chip 1
4 ST1/2 GND1/2
2
OUT2 17
I L2
VOUT1
IGND1/2
VOUT2
R GND1/2
I IN3
I IN4
I ST3/4
VIN3 VIN4 VST3/4
7 IN3
Leadframe
VON3
VON4
Vbb 14 IL3
OUT3
9
IN4
PROFET
Chip 2
8
ST3/4 GND3/4
6
OUT4 13
I L4
VOUT3
IGND3/4
VOUT4
R GND3/4
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 or a single resistor RGND = 75 for
reverse battery protection up to the max. operating voltage.
14) With additional external pull up resistor
15) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to Vbb may be detected by no-load-detection
Semiconductor Group
7

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