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Número de pieza | BTS712N1 | |
Descripción | Smart Four Channel Highside Power Switch | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTS712N1 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! Smart High-Side Power Switch
Smart High-Side Power Switch
PROFET BTS712N1
Data Sheet
Rev 1.3, 2010-03-16
Automotive Power
1 page Smart High-Side Power Switch
BTS712N1
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
IL = 1.8 A
each channel, Tj = 25°C: RON
Tj = 150°C:
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
Nominal load current
one channel active:
two parallel channels active:
four parallel channels active:
Device on PCB5), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled
up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time
to 90% VOUT:
Turn-off time
RL = 12 Ω, Tj =-40...+150°C
to 10% VOUT:
Slew rate on
10 to 30% VOUT, RL = 12 Ω,
Tj =-40...+150°C:
Slew rate off
70 to 40% VOUT, RL = 12 Ω,
Tj =-40...+150°C:
IL(NOM)
IL(GNDhigh)
ton
toff
dV/dton
-dV/dtoff
Operating Parameters
Operating voltage7)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+25°C:
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 14
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Overvoltage protection8)
I bb = 40 mA
Tj =-40...+150°C:
Tj =-40...+150°C:
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
∆Vbb(under)
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
-- 165 200 mΩ
320 400
83 100
42 50
1.7 1.9
--
2.6 2.8
4.1 4.4
A
-- -- 10 mA
80 200 400
80 200 400
µs
0.1 -- 1 V/µs
0.1 -- 1 V/µs
5.0 -- 34
3.5 -- 5.0
-- -- 5.0
7.0
-- 5.6 7.0
-- 0.2
--
34 --
33 --
-- 0.5
42 47
43
--
--
--
V
V
V
V
V
V
V
V
V
7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
8) see also VON(CL) in circuit diagram on page 8.
Data Sheet
5
Rev 1.3, 2010-03-16
5 Page Typ. on-state resistance
; IL = 1.8 A, IN = high
RON [mOhm]
Smart High-Side Power Switch
BTS712N1
Typ. ground pin operating current
VIN = high (one channel on)
IGND [mA]
Vbb [V]
Typ. standby current
; Vbb = 9...34 V, IN1...4 = low
Ibb(off) [µA]
Vbb [V]
Typ. initial short circuit shutdown time
; Vbb =12 V
toff(S C) [ms ec ]
60
50
40
30
20
10
Tj [°C]
Ibb(off) includes four times the current IL(off) of the open
load detection current sources.
0
40 -25 0 25 50 75 100 125 150
Tj, s tart [°C]
Data Sheet
11 Rev 1.3, 2010-03-16
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet BTS712N1.PDF ] |
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