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BTS716 데이터시트 PDF




Infineon Technologies AG에서 제조한 전자 부품 BTS716은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BTS716 기능
기능 Smart High-Side Power Switch Four Channels: 4 x 140m Status Feedback
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BTS716 데이터시트, 핀배열, 회로
BTS 716G
Smart High-Side Power Switch
Four Channels: 4 x 140m
Status Feedback
Product Summary
Package
Operating Voltage
On-state Resistance
Nominal load current
Current limitation
Vbb
Active channels one
5.5 ...40V
four parallel
RON
IL(NOM)
IL(SCr)
140m
2.6A
6.5A
35m
5.3A
6.5A
P-DSO-20
General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOStechnology.
Providing embedded protective functions
Applications
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Diagnostic Function
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
Block Diagram
Vbb
IN1
ST1/2
IN2
Logic
Channel 1
Channel 2
IN3
ST3/4
IN4
Logic
Channel 3
Channel 4
GND
Load 1
Load 2
Load 3
Load 4
Infineon Technologies AG
1 of 14
2003-Oct-01




BTS716 pdf, 반도체, 판매, 대치품
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 , td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 ,
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
(all channels active)
Ta = 25°C:
Ta = 85°C:
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10
IL = 2.3 A, EAS = 76 mJ, 0
one channel:
IL = 3.3 A, EAS = 182 mJ, 0 two parallel channels:
IL = 4.7 A, EAS = 460 mJ, 0 four parallel channels:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k; C=100pF
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
Vbb
Vbb
IL
VLoad dump3)
Tj
Tstg
Ptot
ZL
VESD
VIN
IIN
IIN
IST
BTS 716G
Values Unit
43 V
36 V
self-limited
60
A
V
-40 ...+150
-55 ...+150
3.6
1.9
°C
W
21 mH
25
30
1.0 kV
4.0
8.0
-10 ... +16
±0.3
±5.0
±5.0
V
mA
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
Infineon Technologies AG
4 of 14
2003-Oct-01

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BTS716 전자부품, 판매, 대치품
BTS 716G
Parameter and Conditions, each of the four channels Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Reverse Battery
Reverse battery voltage 17)
Drain-source diode voltage (Vout > Vbb)
IL = - 2.0 A, Tj = +150°C
-Vbb
-VON
Diagnostic Characteristics
Open load detection voltage
V OUT(OL)1
Values
Unit
min typ max
-- --
-- 600
32 V
-- mV
1.7 2.8 4.0 V
Input and Status Feedback18)
Input resistance
(see circuit page 9)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Status change after positive input slope19)
with open load
Status change after positive input slope19)
with overload
Status change after negative input slope
with open load
Status change after negative input slope19)
with overtemperature
Off state input current
On state input current
Status output (open drain)
VIN = 0.4 V:
VIN = 5 V:
Zener limit voltage
ST low voltage
IST = +1.6 mA:
IST = +1.6 mA:
RI
VIN(T+)
VIN(T-)
VIN(T)
td(STon)
td(STon)
td(SToff)
td(SToff)
IIN(off)
IIN(on)
VST(high)
VST(low)
2.5 4.0 6.0 k
-- -- 2.5 V
1.0 -- -- V
-- 0.2
-- V
-- 10 20 µs
30 -- -- µs
-- -- 500 µs
-- -- 20 µs
5 -- 20 µA
10 35 60 µA
5.4 -- -- V
-- -- 0.6
17) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
18) If ground resistors RGND are used, add the voltage drop across these resistors.
19) not subject to production test, specified by design
Infineon Technologies AG
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2003-Oct-01

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