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PDF BTS716G Data sheet ( Hoja de datos )

Número de pieza BTS716G
Descripción Smart High-Side Power Switch Four Channels: 4 x 140m Status Feedback
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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BTS 716G
Smart High-Side Power Switch
Four Channels: 4 x 140m
Status Feedback
Product Summary
Package
Operating Voltage
On-state Resistance
Nominal load current
Current limitation
Vbb
Active channels one
5.5 ...40V
four parallel
RON
IL(NOM)
IL(SCr)
140m
2.6A
6.5A
35m
5.3A
6.5A
P-DSO-20
General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOStechnology.
Providing embedded protective functions
Applications
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Diagnostic Function
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
Block Diagram
Vbb
IN1
ST1/2
IN2
Logic
Channel 1
Channel 2
IN3
ST3/4
IN4
Logic
Channel 3
Channel 4
GND
Load 1
Load 2
Load 3
Load 4
Infineon Technologies AG
1 of 14
2003-Oct-01

1 page




BTS716G pdf
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
junction - soldering point6)7)
junction – ambient6)
@ 6 cm2 cooling area
each channel:
one channel active:
all channels active:
Rthjs
Rthja
Electrical Characteristics
Parameter and Conditions, each of the four channels
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Symbol
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A
each channel, Tj = 25°C:
Tj = 150°C:
two parallel channels, Tj = 25°C:
four parallel channels, Tj = 25°C:
see diagram, page 11
RON
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
four parallel channels active:
Device on PCB6), Ta = 85°C, Tj 150°C
Output current while GND disconnected or pulled up8); IL(GNDhigh)
Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time9)
IN to 90% VOUT: ton
Turn-off time
IN to 10% VOUT: toff
RL = 12
Slew rate on 9)
Slew rate off 9)
10 to 30% VOUT, RL = 12 : dV/dton
70 to 40% VOUT, RL = 12 : -dV/dtoff
BTS 716G
Values
Unit
min typ max
-- -- 17 K/W
-- -- --
-- 44
--
-- 35
--
Values
Unit
min typ max
-- 110 140 m
-- 210 280
-- 55 70
-- 28 35
2.3 2.6
3.3 3.7
4.7 5.3
-- A
--
--
-- -- 2 mA
-- 100 250 µs
-- 100 270
0.2 -- 1.0 V/µs
0.2 -- 1.1 V/µs
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) Soldering point: upper side of solder edge of device pin 15. See page 14
8) not subject to production test, specified by design
9) See timing diagram on page 12.
Infineon Technologies AG
5 of 14
2003-Oct-01

5 Page





BTS716G arduino
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
240 Tj = 150°C
180
120 25°C
-40°C
60
0
5 7 9 11
30 40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low
Ibb(off) [µA]
45
40
35
30
25
20
15
10
5
0
-50 0 50 100
Infineon Technologies AG
150 200
Tj [°C]
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BTS 716G
2003-Oct-01

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