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PDF BTS720L1 Data sheet ( Hoja de datos )
| Número de pieza | BTS720L1 | |
| Descripción | Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS720L1 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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PROFET® BTS720L1
Smart Four Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation IL(SCr)
Vbb(AZ)
Vbb(on)
43 V
5.0 ... 24 V
one two parallel four parallel
100 50
25 mΩ
2.9 4.3 6.3 A
10 10 10 A
Application
• µC compatible power switch with diagnostic feedback
for 12 V DC grounded loads
• Most suitable for resistive and lamp loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Symbol
Vbb
IN1
IN2
IN3
IN4
OUT1
OUT2
OUT3
OUT4
ST1/2
ST3/4
GND1/2
GND3/4
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
Input 1 .. 4, activates channel 1 .. 4 in case of
logic high signal
Output 1 .. 4, protected high-side power output
of channel 1 .. 4. Design the wiring for the
max. short circuit current
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
Ground 1/2 of chip 1 (channel 1 and channel 2)
Ground 3/4 of chip 2 (channel 3 and channel 4)
Pin configuration (top view)
Vbb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT2
16 Vbb
15 Vbb
14 OUT3
13 OUT4
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
Page 1 of 14
26.Feb.96
1 page  
Parameter and Conditions, each of the four channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS720L1
Values
Unit
min typ max
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 11)
each channel, Tj =-40°C:
Tj =25°C:
Tj =+150°C:
two parallel channels
four parallel channels
Repetitive short circuit current limit,
Tj = Tjt
each channel
two parallel channels
four parallel channels
(see timing diagrams, page 11)
Initial short circuit shutdown time
Tj,start =-40°C:
Tj,start = 25°C:
(see page 10 and timing diagrams on page 11)
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
16 22 28
12 18 24
7 11 15
twice the current of one channel
four times the current of one channel
IL(SCr)
-- 10
-- 10
-- 10
--
--
--
toff(SC)
-- 3.8
-- 3
--
--
Tjt 150 -- --
∆Tjt
-- 10
--
A
A
ms
°C
K
Reverse Battery
Reverse battery voltage 10)
Drain-source diode voltage (Vout > Vbb)
IL = - 2.9 A, Tj = +150°C
-Vbb
-VON
-- --
-- 610
32 V
-- mV
Diagnostic Characteristics
Open load detection current, (on-condition)
each channel, Tj = -40°C:
Tj = 25°C:
Tj = +150°C:
two parallel channels
four parallel channels
Open load detection voltage11) Tj =-40..+150°C:
Internal output pull down
(OUT to GND), VOUT = 5 V
Tj =-40..+150°C:
I L (OL)4
800 -- 1450
800 -- 1300
550 -- 1200
twice the current of one channel
four times the current of one channel
VOUT(OL)
234
RO 4 10 30
mA
V
kΩ
10) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
11) External pull up resistor required for open load detection in off state.
Semiconductor Group
Page 5
26.Feb.96
5 Page 
BTS720L1
Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on:
IN1
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
IN1 other channel: normal operation
IN2
V bb
V
OUT1
V
OUT2
ST open drain
Figure 2a: Switching a lamp:
IN
ST
V
OUT
I
L1
I L(SCp)
I L(SCr)
t off(SC)
ST
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions (toff(SC) vs. Tj,start see page 10)
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
IN1/2
I +I
L1 L2
I L(SCp)
I
L
t
The initial peak current should be limited by the lamp and not by
the initial short circuit current IL(SCp) = 18 A typ. of the device.
toff(SC)
ST1/2
I L(SCr)
t
Semiconductor Group
Page 11
26.Feb.96
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BTS720L1.PDF ] | |
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