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부품번호 | BTS723GW 기능 |
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기능 | Smart High-Side Power Switch | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 17 페이지수
Smart High-Side Power Switch
BTS723GW
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Data Sheet
1 V1.1, 2007-09-25
Smart High-Side Power Switch
BTS723GW
Parameter
Symbol
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Output Voltage to Vbb
Negative voltage slope at output
Load current (Short-circuit current, see page 7)
Load dump protection2) VLoadDump = VA + Vs, VA = 27 V
RI3) = 8 Ω, td = 200 ms; IN = low or high,
each channel loaded with RL = 20 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)5)
(all channels active)
Ta = 25°C:
Ta = 85°C:
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C5),
IL = 2.5 A, EAS = 110 mJ, 0 Ω
IL = 3.5 A, EAS = 278 mJ, 0 Ω
see diagrams on page 12
one channel:
two parallel channels:
Electrostatic discharge capability (ESD):
(Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993 R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Status pull up voltage
Vbb
Vbb
VON
-dVOUT/dt
IL
VLoad dump4)
Tj
Tstg
Ptot
ZL
VESD
VIN
IIN
IST
VSPU
Values Unit
58 V
50 V
70
20
I 1)
L(LIM)
70
V
V/µs
A
V
-40 ...+150
-55 ...+150
3.0
1.6
°C
W
23.0 mH
30.0
1.0 kV
±42
±2.0
±2.0
±42
V
mA
V
1) Current limit is a protection function. Operation in current limitation is considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
Data Sheet
4 V1.1, 2007-09-25
4페이지 Smart High-Side Power Switch
BTS723GW
Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, Vbb = 24 V unless otherwise specified
Values
Unit
min typ Max
Protection Functions14)
Current limit, (see timing diagrams, page 13)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit 15),
Tj = Tjt
each channel
two parallel channels
(see timing diagrams, page 13)
Initial short circuit shutdown time Tj,start =25°C:
(see timing diagrams on page 13)
Output clamp (inductive load switch off)16)
at VON(CL) = Vbb - VOUT, IL = 1 A
Thermal overload trip temperature
Thermal hysteresis
IL(lim)
IL(SCr)
toff(SC)
VON(CL)
Tjt
∆Tjt
-- 10 12 A
-- 9 --
5 8 --
-- 8 -- A
-- 8 --
-- 2 -- ms
59 64 70 V
150 -- -- °C
-- 10
-- K
Reverse Battery
Reverse battery voltage 17)
Drain-source diode voltage (Vout > Vbb) 18)
IL = - 3.0 A, Tj = +150°C
Inverse current 19)
GND current in case of 3A inverse current 20)
-Vbb
-VON
-- --
-- 650
24 V
-- mV
IGND(inv cur) -- -- 15 mA
14) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
15) not subject to production test, specified by design
16) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
17) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 10).
18) not subject to production test, specified by design
19) not subject to production test, specified by design
20) In case of an inverse current of 3A the both status outputs must not be disturbed.
The neighbour channel can be switched normally; not all paramters lay within the range of the spec
Please note, that in case of an inverse current no protection function is active. The power dissipation is
higher compared to normal operation in forward mode due to the voltage drop across the drain-source diode
Data Sheet
7 V1.1, 2007-09-25
7페이지 | |||
구 성 | 총 17 페이지수 | ||
다운로드 | [ BTS723GW.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BTS723GW | Smart High-Side Power Switch | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |