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PDF BTS726L1 Data sheet ( Hoja de datos )
| Número de pieza | BTS726L1 | |
| Descripción | Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PROFET® BTS 726 L1
Smart Two Channel Highside Power Switch
Product Summary
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation
IL(SCr)
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
one
60
4.0
16
43
5.0 ... 34
two parallel
30
6.0
16
V
V
mΩ
A
A
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
7
17,18
13,14
4
8
2
6
5,9
Symbol
Vbb
IN1
IN2
OUT1
OUT2
ST1
ST2
GND1
GND2
N.C.
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Input 1,2, activates channel 1,2 in case of
logic high signal
Output 1,2, protected high-side power output
of channel 1,2. Design the wiring for the max.
short circuit current
Diagnostic feedback 1,2 of channel 1,2,
open drain, low on failure
Ground 1 of chip 1 (channel 1)
Ground 2 of chip 2 (channel 2)
Not Connected
Pin configuration (top view)
Vbb
GND1
IN1
ST1
N.C.
GND2
IN2
ST2
N.C.
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT1
16 Vbb
15 Vbb
14 OUT2
13 OUT2
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96
1 page  
Parameter and Conditions, each of the two channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS 726 L1
Values
Unit
min typ max
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND = IGND1 + IGND2,
one channel on:
two channels on:
IL(off)
IGND
-- -- 12 µA
-- 1.8 3.5 mA
-- 3.6
7
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C:
Tj =25°C:
Tj =+150°C:
two parallel channels
Repetitive short circuit current limit,
Tj = Tjt
each channel
two parallel channels
(see timing diagrams, page 12)
Initial short circuit shutdown time
Tj,start =-40°C:
Tj,start = 25°C:
(see page 11 and timing diagrams on page 12)
Output clamp (inductive load switch off)10)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
21 32 43
15 25 35
11 17 24
twice the current of one channel
IL(SCr)
-- 16
-- 16
--
--
toff(SC)
-- 5 --
-- 4 --
VON(CL)
Tjt
∆Tjt
-- 47
150 --
-- 10
--
--
--
A
A
ms
V
°C
K
Reverse Battery
Reverse battery voltage 11)
Drain-source diode voltage (Vout > Vbb)
IL = - 4.0 A, Tj = +150°C
-Vbb
-VON
-- --
-- 610
32 V
-- mV
9) Add IST, if IST > 0
10) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
11) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group
5
5 Page 
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
150
BTS 726 L1
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
40
125
100 Tj = 150°C
75 85°C
25°C
50
-40°
25
35
30
25
20
15
10
5
0
0 10 20 30 40
Vbb [V]
Typ. open load detection current
IL(OL) = f (Vbb,Tj ); IN = high
IL(OL) [mA]
500
450
-40°C
400 25°C
350
85°C
300
Tj = 150°C
250
0
-50
0
50 100 150 200
Tj [°C]
Typ. initial short circuit shutdown time
toff(SC) = f (Tj,start ); Vbb =12 V
toff(SC) [msec]
6
5
4
3
200
2
150
100
1
50
00
0
10
20
30 -50 0
50 100 150 200
Vbb [V]
Tj,start [°C]
Semiconductor Group
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BTS726L1.PDF ] | |
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