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부품번호 | BTS733L1 기능 |
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기능 | Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | ||
제조업체 | Siemens Semiconductor Group | ||
로고 | |||
전체 14 페이지수
PROFET® BTS 733 L1
Smart Two Channel Highside Power Switch
Features
Product Summary
• Overload protection
Overvoltage Protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
Operating voltage
active channels:
On-state resistance
Nominal load current
Current limitation
RON
IL(NOM)
IL(SCr)
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
one
40
4.8
21
43 V
5.0 ... 24 V
two parallel
20 mΩ
7.3 A
21 A
Application
• µC compatible power switch with diagnostic feedback
for 12 V DC grounded loads
• Most suitable for resistive and lamp loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
7
17,18
13,14
4
8
2
6
5,9
Symbol
Vbb
IN1
IN2
OUT1
OUT2
ST1
ST2
GND1
GND2
N.C.
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Input 1,2, activates channel 1,2 in case of
logic high signal
Output 1,2, protected high-side power output
of channel 1,2. Design the wiring for the max.
short circuit current
Diagnostic feedback 1,2 of channel 1,2,
open drain, low on failure
Ground 1 of chip 1 (channel 1)
Ground 2 of chip 2 (channel 2)
Not Connected
Pin configuration (top view)
Vbb
GND1
IN1
ST1
N.C.
GND2
IN2
ST2
N.C.
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT1
16 Vbb
15 Vbb
14 OUT2
13 OUT2
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
10.96
BTS 733 L1
Parameter and Conditions, each of the two channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Nominal load current
one channel active:
two parallel channels active:
Device on PCB5), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled
up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time7)
IN to 90% VOUT:
Turn-off time
IN to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on 7)
10 to 30% VOUT, RL = 12 Ω,
Tj =-40...+150°C:
Slew rate off 7)
70 to 40% VOUT, RL = 12 Ω,
Tj =-40...+150°C:
IL(NOM)
IL(GNDhigh)
ton
toff
dV/dton
-dV/dtoff
Values
Unit
min typ max
4.4 4.8
6.7 7.3
-- A
-- -- 10 mA
80 180 350 µs
80 250 450
0.1 -- 1 V/µs
0.1 -- 1 V/µs
Operating Parameters
Operating voltage8)
Tj =-40...+150°C: Vbb(on)
5.0 -- 24 V
Undervoltage shutdown
Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart
Tj =-40...+25°C: Vbb(u rst)
Tj =+150°C:
-- -- 5.0 V
7.0
Undervoltage restart of charge pump
Vbb(ucp)
see diagram page 13
Tj =-40...+150°C:
-- 5.6 7.0 V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
-- 0.2
-- V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
24 -- 34 V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
23 -- -- V
Overvoltage hysteresis
Overvoltage protection9)
I bb = 40 mA
Tj =-40...+150°C: ∆Vbb(over)
Tj =-40...+150°C: Vbb(AZ)
-- 0.5
42 47
-- V
-- V
Standby current, all channels off
VIN = 0
Tj =25°C: Ibb(off)
Tj =150°C:
-- 16 40 µA
-- 24 50
Leakage output current (included in Ibb(off))
VIN = 0
IL(off)
-- -- 20 µA
Operating current 10), VIN = 5V, Tj =-40...+150°C
IGND = IGND1 + IGND2,
one channel on: IGND
two channels on:
-- 1.8
-- 3.6
4 mA
8
7) See timing diagram on page 11.
8) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
9) see also VON(CL) in circuit diagram on page 8.
10) Add IST, if IST > 0
Semiconductor Group
4
4페이지 BTS 733 L1
Truth Table
Channel 1 Input 1 Output 1 Status 1
Channel 2 Input 2 Output 2 Status 2
Normal
operation
Open load
Short circuit
to Vbb
Overtem-
perature
Under-
voltage
Overvoltage
level
L
H
L
H
L
H
L
H
L
H
L
H
level
L
H
Z
H
H
H
L
L
L
L
L
L
BTS 733L1
H
H
H (L14))
L
L15)
H (L16))
H
L
H
H
H
H
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The
status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
Ibb
Vbb I IN1
3
I ST1
4
V IN1 VST1
Leadframe
Vbb
IN1
I L1
PROFET
OUT1
17,18
Chip 1
ST1
GND1
2
RGND1
IGND1
VON1
VOUT1
V
IN2
I IN2
7
I ST2
8
VST2
Leadframe
Vbb
IN2
I L2
PROFET
OUT2
13,14
Chip 2
ST2
GND2
6
RGND2
IGND2
VON2
VOUT2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
14) With external resistor between output and Vbb
15) An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to Vbb may be detected by no-load-detection
Semiconductor Group
7
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부품번호 | 상세설명 및 기능 | 제조사 |
BTS733L1 | Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |