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PDF BTS734L1 Data sheet ( Hoja de datos )
| Número de pieza | BTS734L1 | |
| Descripción | Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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PROFET® BTS 734 L1
Smart Two Channel Highside Power Switch
Features
Product Summary
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation
IL(SCr)
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
one
40
4.8
19
43 V
5.0 ... 34 V
two parallel
20 mΩ
7.3 A
19 A
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
7
17,18
13,14
4
8
2
6
5,9
Symbol
Vbb
IN1
IN2
OUT1
OUT2
ST1
ST2
GND1
GND2
N.C.
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
Input 1,2, activates channel 1,2 in case of
logic high signal
Output 1,2, protected high-side power output
of channel 1,2. Design the wiring for the max.
short circuit current
Diagnostic feedback 1,2 of channel 1,2,
open drain, low on failure
Ground 1 of chip 1 (channel 1)
Ground 2 of chip 2 (channel 2)
Not Connected
Pin configuration (top view)
Vbb
GND1
IN1
ST1
N.C.
GND2
IN2
ST2
N.C.
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT1
16 Vbb
15 Vbb
14 OUT2
13 OUT2
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
10.96
1 page  
Parameter and Conditions, each of the two channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 10), VIN = 5V, Tj =-40...+150°C
IGND = IGND1 + IGND2,
one channel on:
two channels on:
IL(off)
IGND
BTS 734 L1
Values
Unit
min typ max
-- -- 20 µA
-- 1.8
-- 3.6
4 mA
8
Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 13)
each channel, Tj =-40°C:
Tj =25°C:
Tj =+150°C:
two parallel channels
Repetitive short circuit current limit,
Tj = Tjt
each channel
two parallel channels
(see timing diagrams, page 13)
Initial short circuit shutdown time
Tj,start =-40°C:
Tj,start = 25°C:
(see page 11 and timing diagrams on page 13)
Output clamp (inductive load switch off)11)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
47 55 66
35 44 54
21 26 34
twice the current of one channel
IL(SCr)
-- 19
-- 19
--
--
toff(SC)
-- 3
-- 2.5
--
--
VON(CL)
Tjt
∆Tjt
41 47
150 --
-- 10
--
--
--
A
A
ms
V
°C
K
Reverse Battery
Reverse battery voltage 12)
Drain-source diode voltage (Vout > Vbb)
IL = - 4.8 A, Tj = +150°C
-Vbb
-VON
-- --
-- 600
32 V
-- mV
10) Add IST, if IST > 0
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 8).
Semiconductor Group
5
5 Page 
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
120
100
BTS 734 L1
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
45
40
35
80
Tj = 150°C
60
85°C
25°C
40
-40°C
20
30
25
20
15
10
5
0
0 10 20 30 40
Vbb [V]
Typ. open load detection current
IL(OL) = f (Vbb,Tj ); IN = high
IL(OL) [mA]
800
700
-40°C
600 25°C
500
85°C
400
Tj = 150°C
300
200
100
0
-50 0 50 100 150 200
Tj [°C]
Typ. initial short circuit shutdown time
toff(SC) = f (Tj,start ); Vbb =12 V
toff(SC) [msec]
3
2.5
2
1.5
1
0.5
0
0 5 10 15 20 25 30
Vbb [V]
0
-50
0
50 100 150 200
Tj,start [°C]
Semiconductor Group
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BTS734L1.PDF ] | |
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