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부품번호 | BTS736L2 기능 |
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기능 | Smart High-Side Power Switch Two Channels: 2 x 40m Status Feedback | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 14 페이지수
PROFET® BTS 736 L2
Smart High-Side Power Switch
Two Channels: 2 x 40mΩ
Status Feedback
Product Summary
Package
Operating Voltage
On-state Resistance
Nominal load current
Current limitation
Vbb(on)
Active channels one
RON
IL(NOM)
IL(SCr)
40mΩ
4.8A
30A
4.75...41V
two parallel
20mΩ
7.3A
30A
P-DSO-20-9
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD)
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
• Feedback of thermal shutdown in ON-state
Block Diagram
Vbb
IN1 Logic
ST1
Channel
1
IN2 Logic
ST2
Channel
2
PROFET
GND
OUT 1
Load 1
OUT 2
Load 2
Semiconductor Group
1 of 14
2003-Oct-01
BTS 736 L2
Electrical Characteristics
Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A, Vbb ≥ 7V
each channel, Tj = 25°C: RON
Tj = 150°C:
two parallel channels, Tj = 25°C:
see diagram, page 10
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
Device on PCB6), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled up7); IL(GNDhigh)
Vbb = 30 V, VIN = 0, see diagram page 8
Turn-on time8)
IN to 90% VOUT: ton
Turn-off time
IN to 10% VOUT: toff
RL = 12 Ω
Slew rate on 8)
10 to 30% VOUT, RL = 12 Ω
Tj = -40°C: dV/dton
Tj = 25°C...150°C:
Slew rate off 8)
70 to 40% VOUT, RL = 12 Ω
Tj = -40°C: -dV/dtoff
Tj = 25°C...150°C:
Values
Unit
min typ Max
-- 36
67
18
4.4 4.8
6.7 7.3
40 mΩ
75
20
-- A
-- -- 2 mA
50 100 200 µs
50 120 250
0.15
0.15
0.15
0.15
-- 1 V/µs
-- 0.8
-- 1 V/µs
-- 0.8
Operating Parameters
Operating voltage
Tj=-40
Overvoltage protection9)
Tj=25...150°C:
Tj =-40°C:
I bb = 40 mA
Standby current10)
Tj =25...150°C:
Tj =-40°C...25°C:
VIN = 0; see diagram page 10
Tj =150°C:
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 11), VIN = 5V,
IGND = IGND1 + IGND2,
one channel on:
two channels on:
Vbb(on)
Vbb(AZ)
Ibb(off)
IL(off)
IGND
4.75
-- 41 V
-- 43
41 -- -- V
43 47 52
-- 10 16 µA
-- -- 50
-- 1 10 µA
-- 0.8 1.4 mA
-- 1.6 2.8
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) not subject to production test, specified by design
8) See timing diagram on page 11.
9) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 8.
10) Measured with load; for the whole device; all channels off
11) Add IST, if IST > 0
Semiconductor Group
4
2003-Oct-01
4페이지 BTS 736 L2
Truth Table
Channel 1 Input 1 Output 1 Status 1
Channel 2 Input 2 Output 2 Status 2
Normal
operation
Open load
Overtem-
perature
level
L
H
L
H
L
H
level
L
H
Z
H
L
L
BTS 736L2
H
H
H
L
H
L
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The
status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.
Terms
Ibb
Vbb I IN1
3 IN1
Leadframe
Vbb
I L1
V IN1
I ST1
VST1 4
ST1
PROFET
Chip 1
GND1
OUT1 17,18
2
R GND1
IGND1
VON1
V OUT1
V IN2
I IN2
7
I ST2
8
V ST2
Leadframe
IN2 Vbb
PROFET OUT2
Chip 2
ST2
GND2
6
R GND2
IGND2
I L2
13,14
VON2
V OUT2
Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
Semiconductor Group
7
2003-Oct-01
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부품번호 | 상세설명 및 기능 | 제조사 |
BTS736L2 | Smart High-Side Power Switch Two Channels: 2 x 40m Status Feedback | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |