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부품번호 | BTS737S3 기능 |
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기능 | Smart High-Side Power Switch Four Channels: 4 x 35m Advanced Current Sense | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 15 페이지수
Datasheet BTS737S3
Smart High-Side Power Switch
Four Channels: 4 x 35mΩ
Advanced Current Sense
Product Summary
Package
Operating Voltage
Vbb(on)
Active channels one
On-state Resistance
Nominal load current
RON
IL(NOM)
35mΩ
5.4A
Current limitation
IL(SCr)
40A
5.0 ...40V
four parallel
9mΩ
11.1A
40A
P-DSO-28
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• Improved electromagnetic compatibility (EMC)
• CMOS compatible input
• Stable behaviour at undervoltage
• Wide operating voltage range
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Reverse battery protection with external resistor
• Overvoltage protection with external resistor (incl. load
dump)
• Loss of ground protection
• Electrostatic discharge protection (ESD)
Diagnostic Function
• Proportional load current sense (with defined fault signal
during thermal shutdown and current limit)
Block Diagram
Vbb
IN1
IS1
IS2
IN2
Logic
Channel 1
Channel 2
IN3
IS3
IS4
IN4
Logic
Channel 3
Channel 4
GND
Load 1
Load 2
Load 3
Load 4
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Datasheet BTS737S3
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection1)
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection3) VLoadDump = VA + Vs, VA = 13.5 V
RI4) = 2 Ω, td = 400 ms; IN = low or high,
each channel loaded with RL = 4.7 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)6)
Ta = 25°C:
(all channels active)
Ta = 85°C:
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C6),
IL = 4.0 A, EAS = 0.8J, 0 Ω
one channel:
IL = 6.0 A, EAS = 1.0J, 0 Ω
two parallel channels:
IL = 9.5 A, EAS = 1.5J, 0 Ω
four parallel channels:
see diagrams on page 10
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through sense pin (DC)
see internal circuit diagram page 9
Vbb
Vbb
IL
VLoad dump5)
Tj
Tstg
Ptot
ZL
VESD
VIN
IIN
IIS
Values Unit
40 V
36 V
I2
L(lim)
60
V
-40 ...+150
-55 ...+150
3.7
1.9
°C
W
33 mH
37
64
1.0 kV
4.0
8.0
-10 ... +16
±0.3
±0.3
V
mA
1) Single pulse
2) Current limit is a protection function. Operation in current limitation is considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75Ω
resistor for the GND connection is recommended.
4) RI = internal resistance of the load dump test pulse generator
5) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
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4페이지 Input16)
Input resistance
(see circuit page 9)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
On state input current
RI
VIN = 0.4 V:
VIN = 5 V:
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
IIN(on)
Diagnostic Characteristics
Current sense ratio, static on-condition,
kILIS =IL:IIS
IL = 10 A:
IL = 2 A:
IL = 1 A:
IL = 0.5 A:
Sense signal in case of fault-conditions17)
Sense signal delay after thermal shutdown18)
(not subject to production test - specified by design)
Sense current saturation
Current sense output voltage limitation
IIS = 0, IL = 5 A:
Current sense leakage/offset current
VIN=0, VIS = 0, IL = 0:
VIN=5 V, VIS = 0, IL = 0:
Current sense settling time to IIS static±10% after
positive input slope, IL = 0
5 A,
(not subject to production test - specified by design)
kILIS
Vfault
tdelay(fault)
IIS,lim
VIS(lim)
IIS(LL)
IIS(LH)
tson(IS)
Datasheet BTS737S3
2.5 3.5 6.0 kΩ
1.7 -- 3.2 V
1.5 -- -- V
-- 0.3
-- V
1 -- 35 µA
20 50 90 µA
-- 5 300 --
4575
4100
4200
3580
5.4
--
5300
5300
5300
5800
6.3
--
6000
6300
6600
8080
7.5
1
V
ms
4 -- -- mA
5.4 6.3 7.5 V
-- --
-- 2.5
1 µA
--
-- -- 300 µs
16) If ground resistors RGND are used, add the voltage drop across these resistors.
17) In the case of current limitation or thermal shutdown the sense signal is no longer a current proportional to
the load current, but a fixed voltage of typ. 6 V.
18) In the case of thermal shutdown the Vfault signal remains for tdelay(fault) longer than the restart of the switch (see
diagram on page 14).
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부품번호 | 상세설명 및 기능 | 제조사 |
BTS737S3 | Smart High-Side Power Switch Four Channels: 4 x 35m Advanced Current Sense | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |