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BTS740S2 데이터시트 PDF




Infineon Technologies AG에서 제조한 전자 부품 BTS740S2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 BTS740S2 기능
기능 Smart High-Side Power Switch
제조업체 Infineon Technologies AG
로고 Infineon Technologies AG 로고


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Smart High-Side Power Switch
BTS740S2
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Data Sheet
1 V1.0, 2007-05-13




BTS740S2 pdf, 반도체, 판매, 대치품
Smart High-Side Power Switch
BTS740S2
Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 5 A
each channel, Tj = 25°C: RON
Tj = 150°C:
two parallel channels, Tj = 25°C:
Output voltage drop limitation at small load
currents, see page 14
IL = 0.5 A
VON(NL)
Tj =-40...+150°C:
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
Device on PCB6), Ta = 85°C, Tj 150°C
Output current while GND disconnected or pulled up7); IL(GNDhigh)
Vbb = 30 V, VIN = 0, see diagram page 10
Turn-on time8)
IN to 90% VOUT: ton
Turn-off time
IN to 10% VOUT: toff
RL = 12
Slew rate on 8)
10 to 30% VOUT, RL = 12 :
dV/dton
Slew rate off 8)
70 to 40% VOUT, RL = 12 :
-dV/dtoff
Values
Unit
min typ max
-- 27 30 m
54 60
14 15
-- 50
4.9 5.5
7.8 8.5
-- mV
-- A
-- -- 8 mA
25 70 150 µs
25 80 200
0.1 -- 1 V/µs
0.1 -- 1 V/µs
Operating Parameters
Operating voltage9)
Vbb(on)
5.0 -- 34
Undervoltage shutdown
Vbb(under) 3.2 -- 5.0
Undervoltage restart
Tj =-40...+25°C: Vbb(u rst)
Tj =+150°C:
-- 4.5 5.5
6.0
Undervoltage restart of charge pump
see diagram page 13
Tj =-40...+25°C: Vbb(ucp)
Tj =150°C:
-- 4.7 6.5
-- -- 7.0
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
-- 0.5
--
Overvoltage shutdown
Vbb(over)
34 -- 43
Overvoltage restart
Vbb(o rst)
33 -- --
V
V
V
V
V
V
V
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
7) not subject to production test, specified by design
8) See timing diagram on page 11.
9) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT Vbb - 2 V
Data Sheet
4 V1.0, 2007-05-13

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BTS740S2 전자부품, 판매, 대치품
Smart High-Side Power Switch
BTS740S2
Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Values
Unit
min typ max
Input and Status Feedback20)
Input resistance
(see circuit page 9)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current
VIN = 0.4 V:
On state input current
VIN = 5 V:
Delay time for status with open load
after Input neg. slope (see diagram page 13)
Status delay after positive input slope
(not subject to production test, specified by design)
Status delay after negative input slope
(not subject to production test, specified by design)
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+25°C, IST = +1.6 mA:
Tj = +150°C, IST = +1.6 mA:
Status leakage current, VST = 5 V, Tj=25 ... +150°C:
RI
VIN(T+)
VIN(T-)
VIN(T)
IIN(off)
IIN(on)
td(ST OL3)
tdon(ST)
tdoff(ST)
VST(high)
VST(low)
IST(high)
3.0 4.5
-- --
1.5 --
-- 0.5
1 --
20 50
-- 400
7.0 k
3.5 V
-- V
-- V
50 µA
90 µA
-- µs
-- 13
-- 1
-- µs
-- µs
5.4 6.1 6.9 V
-- -- 0.4
-- -- 0.7
-- -- 2 µA
20) If ground resistors RGND are used, add the voltage drop across these resistors.
Data Sheet
7
V1.0, 2007-05-13

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관련 데이터시트

부품번호상세설명 및 기능제조사
BTS740S2

Smart High-Side Power Switch

Infineon Technologies AG
Infineon Technologies AG

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