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부품번호 | BTS781GP 기능 |
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기능 | TrilithIC | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 17 페이지수
TrilithIC
BTS 781 GP
Data Sheet
1 Overview
1.1 Features
• Quad D-MOS switch
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low RDS ON: 26 mΩ high-side switch, 14 mΩ low-side
switch (typical values @ 25 °C)
• Maximum peak current: typ. 42 A @ 25 °C=
• Very low quiescent current: typ. 4 µA @ 25 °C=
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag for over temperature
• Open load detection in Off-mode
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
P-TO263-15-1
Type
BTS 781 GP
Ordering Code
Q67006-A9526
Package
P-TO263-15-1
1.2 Description
The BTS 781 GP is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 781 GP can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS® technology
which combines low RDS ON vertical DMOS power stages with CMOS control circuit. The
high-side switch is fully protected and contains the control and diagnosis circuit. To
achieve low RDS ON and fast switching performance, the low-side switches are
manufactured in S-FET 2 logic level technology. The equivalent standard product is the
SPD30N06S2L-13.
Data Sheet 1 2002-06-28
BTS 781 GP
1.5 Functional Block Diagram
6
ST1
DHVS
8, 17
11
ST2
Diagnosis
Biasing and Protection
5
IH1
IH2
GND
10
9
3
IL1
Driver
IN OUT
00LL
0 1 LH
1 0HL
1 1 HH
RO1
RO2
12
16
SH2
DL2
7 SH1
18 DL1
15
IL2
Figure 2
Block Diagram
2
SL1
13
SL2
Data Sheet 4 2002-06-28
4페이지 BTS 781 GP
3 Electrical Characteristics
3.1 Absolute Maximum Ratings
– 40 °C < Tj < 150 °C
Parameter
Symbol
Limit Values
min. max.
Unit Remarks
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
Supply voltage
Supply voltage for full short
circuit protection
HS-drain current
HS-input current
HS-input voltage
Note: * internally limited
VS
VS(SCP)
IS
IIH
VIH
– 0.3
– 10
–5
– 10
42
28
*
5
16
V–
V–
A TC = 125°C; DC
mA Pin IH1 and IH2
V Pin IH1 and IH2
Status Output ST (Pins ST1 and ST2)
Status pull up voltage
Status Output current
VST – 0.3
IST – 5
5.4
5
Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
Drain- source break down
voltage
LS-drain current
LS-drain current
TC = 85°C
LS-input voltage
VDSL
IDL
IDL
VIL
55 –
–20
–
–
– 20
20
25
100
20
Temperatures
Junction temperature
Storage temperature
Tj – 40 150
Tstg – 55 150
V–
mA Pin ST1 or ST2
V VIL = 0 V; ID ≤ 1 mA
A TC = 125°C; DC
A tp < 100 ms; ν < 0.1
A tp < 1 ms; ν < 0.1
V Pin IL1 and IL2
°C –
°C –
Data Sheet 7 2002-06-28
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부품번호 | 상세설명 및 기능 | 제조사 |
BTS781GP | TrilithIC | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |