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Número de pieza | BTS840S2 | |
Descripción | Smart High-Side Power Switch Two Channels: 2 x 30m Current Sense | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTS840S2 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! PROFET® BTS 840 S2
Smart High-Side Power Switch
Two Channels: 2 x 30mΩ
Current Sense
Product Summary
Package
Operating Voltage
Vbb(on)
Active channels: one
On-state Resistance
Load Current (ISO)
Current Limitation
RON
IL(ISO)
IL(SCr)
30mΩ
12A
24A
5.0...34V
two parallel
15mΩ
24A
24A
P-DSO-20-12 (Power SO 20)
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input,
diagnostic feedback and proportional load current sense monolithically integrated in Smart SIPMOS
technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• CMOS compatible input
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Fast demagnetization of inductive loads
• Logic ground independent from load ground
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Proportinal load current sense
• Diagnostic feedback with open drain output
• Open load detection in OFF-state with external resistor
• Feedback of thermal shutdown in ON-state
Vbb
IN1 Logic
ST1 Channel
IS1 1
IN2 Logic
ST2 Channel
IS2 2
PROFET
GND
OUT 1
Load 1
OUT 2
Load 2
Infineon technologies
1 of 15
2003-Oct-01
1 page Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
BTS 840 S2
Values
Unit
min typ max
Operating Parameters
Operating voltage7)
Vbb(on)
5.0 -- 34 V
Undervoltage shutdown
Vbb(under) 3.2 -- 5.0 V
Undervoltage restart
Tj =-40...+25°C: Vbb(u rst)
Tj =+150°C:
-- 4.5 5.5
6.0
V
Undervoltage restart of charge pump
see diagram page 13
Tj =-40...+25°C: Vbb(ucp)
Tj =150°C:
-- 4.7 6.5
-- -- 7.0
V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
-- 0.5
-- V
Overvoltage shutdown
Vbb(over)
34 -- 43 V
Overvoltage restart
Vbb(o rst)
33 -- -- V
Overvoltage hysteresis
Overvoltage protection8)
Ibb=40 mA
Standby current9)
VIN = 0
Tj =-40:
Tj =+25...+150°C:
Tj =-40°C...25°C:
Tj =150°C:
∆Vbb(over)
Vbb(AZ)
Ibb(off)
-- 1 -- V
41 -- -- V
43 47 52
-- 8 30 µA
-- 24 50
Leakage output current (included in Ibb(off)); VIN = 0 IL(off)
-- -- 20 µA
Operating current 10), VIN = 5V,
IGND = IGND1 + IGND2,
one channel on: IGND
two channels on:
-- 1.2
-- 2.4
3 mA
6
Protection Functions11)
Current limit, (see timing diagrams, page 12)
Repetitive short circuit current limit,
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Tj = Tjt
each channel
two parallel channels
(see timing diagrams, page 12)
Initial short circuit shutdown time Tj,start =25°C:
(see timing diagrams on page 12)
IL(lim)
IL(SCr)
toff(SC)
48 56
40 50
31 37
-- 24
-- 24
-- 4.0
65 A
58
45
-- A
--
-- ms
7) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V
8) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram page 9.
9) Measured with load; for the whole device; all channels off
10) Add IST, if IST > 0
11) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Infineon technologies
5
2003-Oct-01
5 Page BTS 840 S2
Timing diagrams
Both channels are symmetric and consequently the diagrams are valid for channel 1 and
channel 2
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IN
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
IN
ST t don(ST)
VOUT
t on
IL tslc(IS)
t doff(ST)
t off
t slc(IS)
VOUT
90%
t on
dV/dton
10%
Load 1
Load 2
IIS
tson(IS)
t soff(IS)
t
The sense signal is not valid during settling time after turn or
change of load current.
Figure 1b:
IN1
Vbb
turn
on:
IL
Figure 2b: Switching a lamp:
IN
IN2
V bb
ST
V
OUT1
V
OUT2
ST1 open drain
VOUT
I
L
dV/dtoff
t
off
t
ST2 open drain
proper turn on under all conditions
Infineon technologies
t
t
The initial peak current should be limited by the lamp and not by
the current limit of the device.
11 2003-Oct-01
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet BTS840S2.PDF ] |
Número de pieza | Descripción | Fabricantes |
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