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BU1506 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BU1506
기능 Silicon Diffused Power Transistor
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BU1506 데이터시트, 핀배열, 회로
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 3.0 A; IB = 0.79 A
IF = 3.0 A
ICM = 3.0 A; IB(end) = 0.67 A
TYP.
-
-
-
-
-
-
3.0
1.6
0.25
MAX.
1500
700
5
8
32
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1500
700
5
8
3
8
100
8
32
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.300




BU1506 pdf, 반도체, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
VBESAT / V
1.2
Tj = 25 C
1.1 Tj = 125 C
1
0.9
IC =
0.8 4A
3A
2.5A
0.7
0.6
0 1 2 3 IB / A 4
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VCESAT / V
10
IC = 2.5A
3A
4A
1
Tj = 25 C
Tj = 125 C
0.1
0.1
1
IB / A
10
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Eoff / uJ
1000
IC = 3A
100 2.5A
ts, tf / us
10
9
ts
8
7
6
5
4
IC =
3
3A
2 2.5A
1 tf
0
0.1
1
IB / A
10
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
10
0.1
1
IB / A
10
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC
September 1997
4
Rev 1.300

4페이지










BU1506 전자부품, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.300

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