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PDF BU1706AX Data sheet ( Hoja de datos )
| Número de pieza | BU1706AX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 1.5 A; IB = 0.3 A
ICM = 1.5 A; IB(on) = 0.3 A
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
32
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20ms period
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1750
850
5
8
3
5
100
4
32
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
April 1994 1 Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AX
IC / A
10 ICM
I CDC
1
Ptot
tp =
0.1 100 us
1 ms
10 ms
DC
0.01
1
10 VCE / V 100
1000
Fig.13. Forward bias safe operating area. Ths = 25 ˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
VCESAT / V
10
BU1706A
h FE
100
5V
10
1V
Tj = 25 C
1 Tj = 125 C
BU1706A
0.1
0.01
0.1
IC / A
1
Fig.15. Typical DC current gain.
hFE = f(IC); parameter VCE
10
IC / A
6
BU1706A
5
4
3
2
1
0
0
400
800
1200
VCE / V
1600
2000
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
1
3A
2A
1.5 A
0.1 IC = 0.5A
Tj = 25 C
Tj = 125 C
0.01
0.01
0.1
IB / A
1
10
Fig.14. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
April 1994 5 Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU1706AX.PDF ] | |
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