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PDF BU2506DF Data sheet ( Hoja de datos )
| Número de pieza | BU2506DF | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2506DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 3.0 A; IB = 0.79 A
IF = 3.0 A
ICsat = 3.0 A; IB(end) = 0.67 A
TYP.
-
-
-
-
-
-
3.0
1.6
0.25
MAX.
1500
700
5
8
45
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
5
8
3
5
100
4
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
1 Turn-off current.
September 1997
1
Rev 1.400
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2506DF
IC / A
100
IC / A
100
ICM max
10
IC max
= 0.01
II
tp =
10 us
1 Ptot max
100 us
I
0.1
1 ms
10 ms
DC
0.01
1
10 100 1000
VCE / V
Fig.12. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
ICM max
10
IC max
= 0.01
II
tp =
10 us
1
Ptot max
I
0.1
100 us
1 ms
10 ms
DC
0.01
1 10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
September 1997
5
Rev 1.400
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU2506DF.PDF ] | |
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