|
|
PDF BU2507DF Data sheet ( Hoja de datos )
| Número de pieza | BU2507DF | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BU2507DF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2507DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 4 A; IB = 0.8 A
f = 16kHz
IF = 4 A
ICsat = 4 A; f = 16kHz
TYP.
-
-
-
-
-
-
4
1.7
0.25
MAX.
1500
700
8
15
45
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
1 Turn-off current.
September 1997
1
Rev 1.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2507DF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
0.7
21.5
max
15.3 max
3.1
7.3 3.3
5.2 max
3.2
o
6.2 45
5.8
seating
plane
3.5
15.7
min
1
2.1 max
23
1.2
1.0
5.45 5.45
3.5 max
not tinned
0.4 M
0.7 max
2.0
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BU2507DF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BU2507DF | Silicon Diffused Power Transistor | NXP Semiconductors |
| BU2507DX | Silicon Diffused Power Transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |