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PDF BU2508D Data sheet ( Hoja de datos )
| Número de pieza | BU2508D | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508D
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 4.5 A; IB = 1.29 A
IC = 4.5 A; IB = 1.1 A
IF = 4.5 A
ICM = 4.5 A; IB(end) = 1.1 A
TYP.
-
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
125
1.0
5.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
V
A
V
µs
PINNING - SOT93
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
1 Turn-off current.
December 1995
1
Rev 1.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
IC / A
100
ICM max
10 IC max
(1)
I
1
0.1
= 0.01
II
(2)
tp =
5 us
10
20
50
100
200
500
1 ms
2
5
10
20
DC
0.01
1 10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Tmb = 25˚C
(1) Ptot max line.
(2) Second-breakdown limits
(independent of temperature).
I Region of DC operation.
II Extension for repetitive pulse operation.
Product specification
BU2508D
December 1995
5
Rev 1.200
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU2508D.PDF ] | |
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