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PDF BU2515DX Data sheet ( Hoja de datos )
| Número de pieza | BU2515DX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2515DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 4.5 A; IB = 0.9 A
f = 56 kHz
IF = 4.5 A
ICsat = 4.5 A; f = 56 kHz
TYP.
-
-
-
-
-
-
4.5
-
0.2
MAX.
1500
800
9
20
45
5.0
-
2.2
0.4
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
9
20
5
7.5
125
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.300
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2515DX
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.13. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
CFB = 0.5 - 8 nF; IB(end) = 0.65 - 1.3 A
IC / A
30
BU2515
20 Area where
fails occur
10
0
100 1000 1500
VCE / V
Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax
Ic(sat) (A)
8
BU2515AF/AX
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
frequency (kHz)
Fig.15. ICsat during normal running vs. frequency of
operation for optimum performance
September 1997
5
Rev 1.300
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU2515DX.PDF ] | |
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