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PDF BU2520A Data sheet ( Hoja de datos )
| Número de pieza | BU2520A | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 6.0 A; IB = 1.2 A
ICM = 6.0 A; IB(end) = 0.85 A
TYP.
-
-
-
-
-
-
6
0.2
MAX.
1500
800
10
25
125
5.0
-
0.35
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT93
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
10
25
6
9
150
6
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
1 Turn-off current.
November 1995
1
Rev 1.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520A
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.15. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
10 Zth / (K/W)
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
PD tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.16. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
IC / A
100
ICM
ICDC
10
= 0.01
Ptot
1
BU2520A
tp =
30 us
100 us
1 ms
0.1
10 ms
DC
0.01
1 10 100 1000 VCE / V
Fig.17. Forward bias safe operating area. Tmb = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
November 1995
5
Rev 1.200
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU2520A.PDF ] | |
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