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PDF BU2520AX Data sheet ( Hoja de datos )
| Número de pieza | BU2520AX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 6.0 A; IB = 1.2 A
ICsat = 6.0 A; IB(end) = 0.85 A
TYP.
-
-
-
-
-
-
6.0
0.2
MAX.
1500
800
10
25
45
5.0
-
0.35
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
10
25
6
9
150
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 2.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520AX
ts, tf / us
12
11
16 kHz
ts
10
9
8
7
6
5 IC =
4 6A
3
2 5A
1 tf
0
0.1
1
IB / A
10
Fig.13. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
12 ts, tf / us
11
32 kHz
10
9
8 ts
7
6
5 IC =
4
3 6A
2 5A
1 tf
0
0.1
1
IB / A
10
Fig.14. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.15. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
10 Zth / (K/W)
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D = tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.16. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
September 1997
5
Rev 2.200
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BU2520AX.PDF ] | |
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