|
|
Número de pieza | BU2523AF | |
Descripción | Silicon Diffused Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BU2523AF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 5.5 A; IB = 1.1 A
f = 64 kHz
ICsat = 5.5 A; f = 64 kHz
TYP.
-
-
-
-
-
-
5.5
0.15
MAX.
1500
800
11
29
45
5.0
-
0.3
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
175
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.100
1 page Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523AF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
0.7
21.5
max
15.3 max
3.1
7.3 3.3
5.2 max
3.2
o
6.2 45
5.8
seating
plane
3.5
15.7
min
1
2.1 max
23
1.2
1.0
5.45 5.45
3.5 max
not tinned
0.4 M
0.7 max
2.0
Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BU2523AF.PDF ] |
Número de pieza | Descripción | Fabricantes |
BU2523AF | Silicon Diffused Power Transistor | NXP Semiconductors |
BU2523AX | Silicon Diffused Power Transistor | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |