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부품번호 | BU2523AX 기능 |
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기능 | Silicon Diffused Power Transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 6 페이지수
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 5.5 A; IB = 1.1 A
f = 64 kHz
ICsat = 5.5 A; f = 64 kHz
TYP.
-
-
-
-
-
-
5.5
0.15
MAX.
1500
800
11
29
45
5.0
-
0.3
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
175
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523AX
ts/tf / us
5
BU2523AF/DF/AX/DX
4
3
2
1
0
0 0.5 1 1.5 2
IB / A
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = 64 kHz
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
Zth / (K/W)
10
BU2525AF
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.11. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.12. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
CFB = 0.5 - 8 nF; IB(end) = 0.55 - 1.1 A
IC / A
30
BU2523
20 Area where
fails occur
10
0
100 1000 1500
VCE / V
Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax
Ic(sat) (A)
8
BU2523AF/AX
7
6
5
4
3
2
1
0 0 10 20 30 40 50 60 70 80
frequency (kHz)
Fig.14. ICsat during normal running vs. frequency of
operation for optimum performance
September 1997
4
Rev 1.100
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BU2523AF | Silicon Diffused Power Transistor | NXP Semiconductors |
BU2523AX | Silicon Diffused Power Transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |