|
|
PDF BU2527A Data sheet ( Hoja de datos )
| Número de pieza | BU2527A | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BU2527A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2527A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 6.0 A; IB = 1.2 A
ICM = 6.0 A; IB(end) = 0.55 A
TYP.
-
-
-
-
-
-
6.0
1.7
MAX.
1500
800
12
30
125
5.0
-
2.0
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT93
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
12
30
8
12
200
7
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
1 Turn-off current.
November 1995
1
Rev 1.100
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2527A
IC / A
100
ICM
ICDC
10
= 0.01
Ptot
1
BU2525A
tp =
40 us
100 us
1 ms
0.1 10 ms
DC
IC / A
30
BU2527AF
20
10
0
0 500 1000 1500
VCE / V
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
0.01
1 10 100 1000 VCE / V
Fig.15. Forward bias safe operating area. Tmb = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
November 1995
5
Rev 1.100
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU2527A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BU2527A | Silicon Diffused Power Transistor |  Philips |
| BU2527A | Silicon Diffused Power Transistor | NXP Semiconductors |
| BU2527A | SILICON POWER TRANSISTOR |  SavantIC |
| BU2527AF | Silicon Diffused Power Transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |