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PDF BU2720DX Data sheet ( Hoja de datos )
| Número de pieza | BU2720DX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2720DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up
to 1700V.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 5.5 A; IB = 1.38 A
f = 16 kHz
ICsat = 5.5 A; f = 16kHz
TYP.
-
-
-
-
-
-
5.5
7.4
MAX.
1700
825
10
25
45
1.0
-
8.5
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
10
25
10
14
150
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
- 10 kV
1 Turn-off current.
September 1997
1
Rev 1.300
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2720DX
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
10 Zth / (K/W)
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D = tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.12. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.13. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;
CFB = 1 - 4 nF; IB(end) = 1.2 - 4 A
IC / A
26
BU2720AF/DF
24
22
20
18 Area where
16 fails occur
14
12
10
8
6
4
2
0
100 1000 1700
VCE / V
Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax
September 1997
5
Rev 1.300
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU2720DX.PDF ] | |
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