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BU2722 데이터시트 PDF




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부품번호 BU2722 기능
기능 Silicon Diffused Power Transistor
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BU2722 데이터시트, 핀배열, 회로
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2722AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4.5 A; IB = 1.0 A
f = 64 kHz
ICsat = 4.5 A; f = 64 kHz
TYP.
-
-
-
-
-
-
4.5
2.9
MAX.
1700
825
10
25
45
1.0
-
3.5
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k)
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
10
25
10
14
150
6
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
- 10 kV
1 Turn-off current.
September 1997
1
Rev 1.200




BU2722 pdf, 반도체, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2722AF
hFE
100
VCE = 1 V
10
BU2720/22AF
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10 IC / A
Fig.7. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
100
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
VCEsat / V
10
Tj = 85 C
Tj = 25 C
1
IC/IB = 8
0.1
BU2722AF
IC/IB = 4
0.01
0.1 1 10 100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
10 Zth / (K/W)
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D = tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.11. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
VBEsat / V
1
Tj = 85 C
Tj = 25 C
0.9
IC = 5.5 A
BU2722AF
ts, tf / us
10
BU2722AF
0.8
4.5 A
0.7
1
0.6
0
Fig.9.
0.5 1 1.5 2
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
0.1
01234
IB / A
Fig.12. Typical storage and fall time.
ts = f(IB); tf = f(IB); IC = 4.5 A; f = 64 kHz; Ths = 85 ˚C
September 1997
4
Rev 1.200

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BU2722 전자부품, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2722AF
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.200

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