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PDF BU2725AF Data sheet ( Hoja de datos )
| Número de pieza | BU2725AF | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 7.0 A; IB = 1.75 A
f = 16 kHz
ICsat = 7.0 A; f = 16 kHz
TYP.
-
-
-
-
-
-
7.0
5.8
MAX.
1700
825
12
30
45
1.0
-
6.5
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
12
30
12
20
200
9
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
- 10 kV
1 Turn-off current.
September 1997
1
Rev 1.300
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725AF
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.13. Test Circuit RBSOA.
VCC = 150 V; -VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;
CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A
IC / A
35
BU2727A/AF/D/DF
30
25
Area where
20 fails occur
15
10
5
0
100 1000 1700
VCE / V
Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax
September 1997
5
Rev 1.300
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU2725AF.PDF ] | |
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