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PDF BU323Z Data sheet ( Hoja de datos )
| Número de pieza | BU323Z | |
| Descripción | NPN Silicon Power Darlington | |
| Fabricantes | ON Semiconductor | |
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Hay una vista previa y un enlace de descarga de BU323Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
Features
• Integrated High−Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
• High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Emitter Voltage
Collector Current − Continuous
− Peak
Base Current
− Continuous
− Peak
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Max
350
6.0
10
20
3.0
6.0
150
1.0
– 65 to
+ 175
Unit
Vdc
Vdc
Adc
Adc
W
W/_C
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
RqJC
TL
1.0 _C/W
260 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE DARLINGTON
AUTOPROTECTED
360 − 450 VOLTS CLAMP,
150 WATTS
360 V
CLAMP
COLLECTOR 2,4
BASE
1
1
2
3
EMITTER 3
4
SOT−93
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 16
1
Publication Order Number:
BU323Z/D
1 page  
ICPEAK
IC
ICPEAK
IC
(a)
BU323Z
IC HIGH
IC LOW
VCE
VGATE MIN
The shaded area represents the amount of energy the
device can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
Figure 4a.
IC HIGH
ICPEAK
IC
(b)
IC LOW
VCE
VGATE MIN
IC HIGH
The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
ICPEAK
IC
(c)
IC LOW
VCE
VGATE MIN
IC HIGH
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the VGATE value, Figure 4d.
IC LOW
VCE
(d) VGATE MIN
Figure 4. Energy Test Criteria for BU323Z
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BU323Z.PDF ] | |
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