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PDF BU406 Data sheet ( Hoja de datos )

Número de pieza BU406
Descripción NPN SILICON POWER TRANSISTORS
Fabricantes Power Innovations Limited 
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No Preview Available ! BU406 Hoja de datos, Descripción, Manual

Copyright © 1997, Power Innovations Limited, UK
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q 7 A Continuous Collector Current
q 15 A Peak Collector Current
q 60 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
BU406
BU407
BU406
BU407
BU406
BU407
SYMBOL
VCBO
VCEX
VCEO
VEB
IC
ICM
IB
Ptot
Tj
Tstg
VALUE
400
330
400
330
200
150
6
7
15
4
60
-55 to +150
-55 to +150
UNIT
V
V
V
V
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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BU406 pdf
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAD124AA
10
1·0
0·1
0.01
1·0
BU407
BU406
10 100
VCE - Collector-Emitter Voltage - V
Figure 6.
1000
PRODUCT INFORMATION
5

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