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What is BU4506AZ?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Silicon Diffused Power Transistor".


BU4506AZ Datasheet PDF - NXP Semiconductors

Part Number BU4506AZ
Description Silicon Diffused Power Transistor
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506AZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 3 A; IB = 0.75 A
f = 16 kHz
ICsat = 3.0 A;f = 16 kHz
TYP.
-
-
-
-
-
-
3.0
300
MAX.
1500
800
5
8
32
3.0
-
450
UNIT
V
V
A
A
W
V
A
ns
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
5
8
3
5
4
32
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
3.9
-
UNIT
K/W
K/W
1 Turn-off current.
July 1999
1
Rev 1.000

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BU4506AZ equivalent
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506AZ
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
1.0 (2x)
0.9
0.7
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1999
5 Rev 1.000


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BU4506AZ electronic component.


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