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PDF BU4506DX Data sheet ( Hoja de datos )
| Número de pieza | BU4506DX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with integrated diode in
a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 3 A; IB = 0.75 A
f = 16 kHz
IF = 3.0 A
ICsat = 3.0 A;f = 16 kHz
TYP.
-
-
-
-
-
-
3.0
1.55
300
MAX.
1500
800
5
8
45
3.0
-
1.9
400
UNIT
V
V
A
A
W
V
A
V
ns
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
5
8
3
5
4
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
32
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
January 1999
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
16.0 max
0.7
5.8 max
3.0
4.5
27
max
22.5
max
10.0
25.1
25.7
5.1
3.3
25
2.2 max
18.1
min
4.5
1.1
0.4 M
2
5.45 5.45
3.3
0.9 max
Fig.12. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 1999
5
Rev 1.000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BU4506DX.PDF ] | |
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