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Número de pieza | BU4507 | |
Descripción | Silicon Diffused Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BU4507 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
tf Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 4 A; IB = 1 A
f = 16kHz
f = 56kHz
ICsat = 4 A; f = 16kHz
ICsat = 4 A; f = 56kHz
TYP.
-
-
-
-
-
-
4
4
0.3
0.21
MAX.
1500
800
8
15
45
3.0
-
-
0.45
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
August 1998
1
Rev 1.100
1 page Philips Semiconductors
Silicon Diffused Power Transistor
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
Product specification
BU4507AF
Zth K/W
10
BU4507AF
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D
=
tp
T
0
0.001
1.0E-07
1.0E-05
1.0E-03
t/s
T
1.0E-01
t
1.0E+01
Fig.14. Transient thermal impedance.
August 1998
5
Rev 1.100
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BU4507.PDF ] |
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