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BU4507 데이터시트 PDF




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부품번호 BU4507 기능
기능 Silicon Diffused Power Transistor
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BU4507 데이터시트, 핀배열, 회로
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
tf Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4 A; IB = 1 A
f = 16kHz
f = 56kHz
ICsat = 4 A; f = 16kHz
ICsat = 4 A; f = 56kHz
TYP.
-
-
-
-
-
-
4
4
0.3
0.21
MAX.
1500
800
8
15
45
3.0
-
-
0.45
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
August 1998
1
Rev 1.100




BU4507 pdf, 반도체, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507AF
hFE
100
VCE = 5V
10
BU4507AF
Ths = 25 C
Ths = 85 C
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU4507AF/X/Z
IC/IB = 5
1
0.001
0.01
0.1
1 IC / A
10
Fig.7. High and low DC current gain.
0.01
0.1 1 10 IC / A 100
Fig.10. Typical collector-emitter saturation voltage.
VCC
IBend
-VBB
LC
LB
T.U.T.
Fig.8. Test Circuit RBSOA.
VCL
CFB
IC / A
30
BU2507
20
10
0
100 1000 1500
VCE / V
Fig.9. Reverse bias safe operating area. Tj Tjmax
VBEsat / V
1.2
1.1
BU4507AF/X/Z
Ths = 25 C
Ths = 85 C
1
0.9
0.8
IC = 4 A
0.7
0.6
0 0.5 1 1.5 2 2.5 IB / A 3
Fig.11. Typical base-emitter saturation voltage.
ts/tf / us
10
8
6
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
ts
4
2 tf
0
0 0.5 1 1.5 2 2.5 IB / A 3
Fig.12. Typical collector storage and fall time.
IC =4 A; Tj = 85˚C; f = 16kHz
August 1998
4
Rev 1.100

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BU4507 전자부품, 판매, 대치품
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507AF
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1998
7
Rev 1.100

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