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PDF BU4508AF Data sheet ( Hoja de datos )
| Número de pieza | BU4508AF | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BU4508AF
Silicon Diffused Power Transistor
Product specification
Supersedes data of January 1998
File under Discrete Semiconductors, SC06
June 1998
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4508AF
hFE
100
VCE = 5V
10
Ths = 25 C
Ths = 85 C
1
0.001
0.01
0.1
1 10
IC / A
Fig.7. High and low DC current gain.
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU4508AF/X/Z
IC/IB = 5
0.01
0.1 1 10 IC / A 100
Fig.8. Typical collector-emitter saturation voltage.
VBEsat / V
1.2
1.1
1 IC = 5 A
BU4508AF/X/Z
Ths = 25 C
Ths = 85 C
0.9
0.8
IC = 4 A
0.7
0.6
0 0.5 1 1.5 2 2.5 IB / A 3
Fig.9. Typical base-emitter saturation voltage.
ts/tf / us
10
8
6
ICsat = 5 A
Ths = 85 C
Freq = 16 kHz
ts
4
2
tf
0
0 0.5 1 1.5 2 2.5 IB / A 3
Fig.10. Typical collector storage and fall time.
IC =5 A; Tj = 85˚C; f = 16kHz
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
Zth K/W
10
BU4508AF
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D
=
tp
T
0.001
1.0E-07
0
1.0E-05
1.0E-03
t/s
T
1.0E-01
t
1.0E+01
Fig.12. Transient thermal impedance.
June 1998 4 Rev 1.000
5 Page 
Philips Semiconductors
Silicon Diffused Power Transistor
NOTES
Product specification
BU4508AF
June 1998 10 Rev 1.000
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BU4508AF.PDF ] | |
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