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PDF BU4508AZ Data sheet ( Hoja de datos )
| Número de pieza | BU4508AZ | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4508AZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
tf Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 5.0 A; IB = 1.25 A
f= 16 kHz
f= 64 kHz
ICsat = 5.0 A; f= 16 kHz
ICsat = 4.0 A; f= 64 kHz
TYP.
-
-
-
-
-
-
5.0
4.0
0.35
0.17
MAX.
1500
800
8
15
32
3.0
-
-
0.48
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
With heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
8
15
4
6
5
32
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
1 Turn-off current.
May 1998
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Ic(sat) (A)
10
8
6
4
2
0
0 20 40 60 80 100
Frequency (kHz)
Fig.13. ICsat during normal running vs. frequency of
operation for optimum performance
Product specification
BU4508AZ
May 1998 5 Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU4508AZ.PDF ] | |
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