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PDF BU4515DX Data sheet ( Hoja de datos )
| Número de pieza | BU4515DX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4515DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
VF Diode forward voltage
tf Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 5.0 A; IB = 1.25 A
f = 16kHz
f = 64kHz
IF = 6 A
ICsat = 6A; f = 16kHz
f = 64kHz
TYP.
-
-
-
-
-
-
6.0
t.b.f
1.7
t.b.f
t.b.f
MAX.
1500
800
9
20
45
3.0
-
-
2.0
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
µs
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
9
20
5
7.5
6
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 1.000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BU4515DX.PDF ] | |
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