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PDF BU4523AX Data sheet ( Hoja de datos )
| Número de pieza | BU4523AX | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4523AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
tf Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 8 A; IB = 2 A
f = 16 kHz
f = 70 kHz
ICsat = 8 A; f = 16 kHz
ICsat = 6.5 A; f = 70 kHz
TYP.
-
-
-
-
-
-
8
6.5
0.3
0.14
MAX.
1500
800
11
29
45
3.0
-
-
0.4
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT399
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
May 1998
1
Rev 1.100
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4523AX
10 Zth / (K/W)
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
Tt
1E+00
Fig.13. Transient thermal impedance.
IC / A
30
BU2523
20
10
0
100 1000 1500
VCE / V
Fig.15. Reverse bias safe operating area. Tj ≤ Tjmax
VCC
IBend
-VBB
LC
LB
T.U.T.
Fig.14. Test Circuit RBSOA.
VCL
CFB
Ic(sat) (A)
10
9
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
Horizontal frequency (kHz)
Fig.16. ICsat during normal running vs. frequency of
operation for optimum performance
May 1998 5 Rev 1.100
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU4523AX.PDF ] | |
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