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PDF BU4525AW Data sheet ( Hoja de datos )
| Número de pieza | BU4525AW | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4525AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
tf Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 9.0 A; IB = 2.25 A
f = 16 kHz
f = 70 kHz
ICsat = 9.0 A;f = 16 kHz
ICsat = 7.0 A;f = 70 kHz
TYP.
-
-
-
-
-
-
9.0
7.0
0.4
0.15
MAX.
1500
800
14
30
125
3.0
-
-
0.55
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT429
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
45
MAX.
1
-
UNIT
K/W
K/W
1 Turn-off current.
May 1998
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4525AW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
3.5
21
max
16 max
5.3 max
1.8
5.3 7.3
o 3.5
max
15.5
max
seating
plane
4.0
15.5 max
min 1 2
3
2.2 max
3.2 max
1.1
5.45 5.45
2.5
0.4 M
0.9 max
Fig.14. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
May 1998 5 Rev 1.000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BU4525AW.PDF ] | |
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