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PDF BU4525DL Data sheet ( Hoja de datos )
| Número de pieza | BU4525DL | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4525DL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers
and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a
very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
ICsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Collector saturation current
tf Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 9.0 A; IB = 2.25 A
IF = 9.0 A
f = 16 kHz
f = 70 kHz
ICsat = 9.0 A;f = 16 kHz
f = 70 kHz
TYP.
-
-
-
-
-
-
-
9.0
t.b.f
0.4
t.b.f
MAX.
1500
800
14
30
125
3.0
2.2
-
-
0.55
t.b.f
UNIT
V
V
A
A
W
V
V
A
A
µs
µs
PINNING - SOT430
PIN DESCRIPTION
1 base
2 collector
3 emitter
heat collector
sink
PIN CONFIGURATION
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
July 1998
1
Rev 1.000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BU4525DL.PDF ] | |
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