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Número de pieza | BU508AF | |
Descripción | Silicon Diffused Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BU508AF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in
horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 4.5 A; IB = 1.6 A
f = 16 kHz
ICsat = 4.5 A; f = 16kHz
TYP.
-
-
-
-
-
-
4.5
0.7
MAX.
1500
700
8
15
34
1.0
-
-
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
34
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
July 1998
1 Rev 1.200
1 page Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508AF
IC / A
100
ICM max
10 IC max
= 0.01
II
tp =
10 us
Ptot max
1
100 us
IC / A
100
ICM max
10 IC max
= 0.01
II
tp =
10 us
Ptot max
1
100 us
I
0.1
1 ms
10 ms
DC
I
0.1
1 ms
10 ms
DC
0.01
1
10 100 1000
VCE / V
Fig.12. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
0.01
1
10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
July 1998
5 Rev 1.200
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BU508AF.PDF ] |
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