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Número de pieza | BU508AW | |
Descripción | Silicon Diffused Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BU508AW (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection
circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 4.5 A; IB = 1.6 A
f = 16 kHz
ICsat = 4.5 A; f = 16kHz
TYP.
-
-
-
-
-
-
4.5
0.7
MAX.
1500
700
8
15
125
1.0
-
-
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT429
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
125
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
July 1998
1 Rev 1.200
1 page Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508AW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
3.5
21
max
16 max
5.3 max
1.8
5.3 7.3
o 3.5
max
15.5
max
seating
plane
4.0
15.5 max
min 1 2
3
2.2 max
3.2 max
1.1
5.45 5.45
2.5
0.4 M
0.9 max
Fig.13. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5 Rev 1.200
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BU508AW.PDF ] |
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