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PDF BU508DF Data sheet ( Hoja de datos )
| Número de pieza | BU508DF | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 4.5 A; IB = 1.6 A
f = 16kHz
IF = 4.5 A
ICsat = 4.5 A; f = 16kHz
TYP.
-
-
-
-
-
-
4.5
1.6
0.7
MAX.
1500
700
8
15
34
1.0
-
2.0
-
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
b
c
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
34
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
July 1998
1 Rev 1.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DF
Zth K/W
10
bu508ax
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0
PD tp
D
=
tp
T
0.001
1.0E-07
1.0E-05
1E-03
Tt
1.0E-01
1.0E+1
t/s
Fig.9. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
IC / A
100
ICM max
10 IC max
= 0.01
II
tp =
10 us
Ptot max
1
100 us
I
0.1
1 ms
10 ms
DC
IC / A
100
ICM max
10 IC max
= 0.01
II
tp =
10 us
Ptot max
1
100 us
I
0.1
1 ms
10 ms
DC
0.01
1
10 100 1000
VCE / V
Fig.11. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
0.01
1
10 100 1000
VCE / V
Fig.10. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
July 1998
5 Rev 1.200
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU508DF.PDF ] | |
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