|
|
PDF BU508DW Data sheet ( Hoja de datos )
| Número de pieza | BU508DW | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BU508DW (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily
for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Tmb ≤ 25 ˚C
IC = 4.5 A; IB = 1.6 A
f = 16kHz
IF = 4.5 A
ICsat = 4.5 A; f = 16kHz
TYP.
-
-
-
-
-
-
4.5
1.6
0.7
MAX.
1500
700
8
15
125
1.0
-
2.0
-
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT429
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
1 23
SYMBOL
b
c
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
125
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
July 1998
1 Rev 1.200
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DW
Fig.10. Forward bias safe operating area. Ths < 25˚C
(1) Ptot max line.
(2) Second-breakdown limits (independent of
temperature).
I Region of permissible DC operation.
II Permissible extension for repetitive pulse
operation.
July 1998
5 Rev 1.200
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU508DW.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BU508D | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |  Wing Shing Computer Components |
| BU508D | POWER TRANSISTORS(5A/1500V/125W) |  Mospec Semiconductor |
| BU508D | SILICON POWER TRANSISTOR |  SavantIC |
| BU508DF | Silicon Diffused Power Transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |